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    DPG30I300HA 0.0 0.4 0.8 1.2 1.6 2.0 10 20 30 40 50 60 0200400100 300 500 20 30 40 rr 50 60 70 80 0.001 0.01 0.1 1 10 0.1 1 0 40 80 120 160 0.2 0.4 0.6 Kf 0.8 1.0 1.2 1.4 TVJ [ -diF /dt [A/μs] °C] t[s] 0 100 200 300 400 500 100 200 300 400 [ns] 500fr 600 700 800 2 4 6 V8 FR [V] FR 10 12 14 16 0 100 200 300 400 500 4 8 12 16 0 100 200 300 400 500 0.1 C] 0.2 Q 0.3r 0.4 0.5 [μ VF [V] -diF/dt [A/μs] ZthJC [K/W] IF = 60 A 30 A 15 A IF = 60 A 30 A 15 A IRM Qrr IF = 60 A 30 A 15 A V tfr 125°C VR = 200 V IF = 30 A diF/dt = 500 A/μs TVJ =125°C VR = 200 V TVJ =125°C VR = 200 V IF =30 A TVJ =125°C VR = 200 V TVJ =150°C TVJ = 125°C VR =200 V Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qr versus -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 4 Typ. dynamic parameters Qr,IRM versus TVJ Fig. 5 Typ. recovery time trrversus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 8 Transient thermal impedance junction to case 25°C IF [A] -diF/dt [A/μs] IRM [A] t [ns] -diF/dt [A/μs] t 0 100 200 300 400 500 2 4 6 8 10 Erec 12 14 [μJ] -diF/dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF/dt IF=5 A 10 A 20 A TVJ=125°C VR = 200 V Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 t i [s] 0.0018 0.002 0.012 0.07 0.345 Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131125b Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |